- 专利标题: Cavity substrate having directional optoelectronic transmission channel and manufacturing method thereof
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申请号: US18093981申请日: 2023-01-06
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公开(公告)号: US11822121B2公开(公告)日: 2023-11-21
- 发明人: Xianming Chen , Lei Feng , Benxia Huang , Wenshi Wang , Lina Jiang
- 申请人: Zhuhai ACCESS Semiconductor Co., Ltd
- 申请人地址: CN Guangdong
- 专利权人: Zhuhai ACCESS Semiconductor Co., Ltd
- 当前专利权人: Zhuhai ACCESS Semiconductor Co., Ltd
- 当前专利权人地址: CN Guangdong
- 代理机构: The PL Law Group, PLLC
- 优先权: CN 2010912209.0 2020.09.02
- 分案原申请号: US17463815 2021.09.01
- 主分类号: G02B6/122
- IPC分类号: G02B6/122 ; G02B6/132 ; G02B6/136 ; G02B6/12
摘要:
A cavity substrate may have a directional optoelectronic transmission channel. The cavity substrate includes a support frame, a first dielectric layer on a first surface of the support frame, and a second dielectric layer on a second surface of the support frame. The support frame, the first dielectric layer and the second dielectric layer constitute a closed cavity having an opening on one side in the length direction of the substrate, a first circuit layer is arranged on the inner surface of the first dielectric layer facing the cavity, an electrode connected with an optical communication device is arranged on the first circuit layer, the electrode is electrically conducted with the first circuit layer, a second circuit layer is arranged on the outer surfaces of the first dielectric layer and the second dielectric layer, and the first circuit layer and the second circuit layer are communicated through a via column.
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