- 专利标题: Low power memory system using dual input-output voltage supplies
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申请号: US18150155申请日: 2023-01-04
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公开(公告)号: US11823762B2公开(公告)日: 2023-11-21
- 发明人: Jungwon Suh , Joon Young Park , Mahalingam Nagarajan
- 申请人: QUALCOMM Incorporated
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理机构: The Marbury Law Group/Qualcomm
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; G11C5/14 ; H03K7/02
摘要:
Various embodiments include a computing device memory system having a memory device, a memory physical layer communicatively connected to the memory device, a first input/output (IO) voltage supply electrically connected to the memory device and to the memory physical layer, and a second TO voltage supply electrically connected to the memory device and to the memory physical layer, in which the memory device and the physical layer are configured to communicate data of a memory transaction using a 3 level pulse amplitude modulation (PAM) IO scheme.
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