- 专利标题: Power semiconductor module and composite module having peripheral structures surrounding parts of the module main body
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申请号: US17251153申请日: 2018-09-20
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公开(公告)号: US11824048B2公开(公告)日: 2023-11-21
- 发明人: Shigeto Fujita , Tetsuya Matsuda
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2018/034715 2018.09.20
- 国际公布: WO2020/059062A 2020.03.26
- 进入国家日期: 2020-12-10
- 主分类号: H05K1/18
- IPC分类号: H05K1/18 ; H01L25/07 ; H01L23/50
摘要:
An uneven current distribution among a plurality of provided power semiconductor chips is to be suppressed. A power semiconductor module includes a module main body, a plurality of power semiconductor chips arranged on an upper surface of the module main body, and peripheral structures being insulating ferromagnets surrounding parts of a periphery of the module main body in a plan view, in which the plurality of power semiconductor chips are arranged in a vertical direction and a horizontal direction in a plan view, and at least one of the plurality of power semiconductor chips is arranged so as to be surrounded by other power semiconductor chips.
公开/授权文献
- US20210257342A1 POWER SEMICONDUCTOR MODULE AND COMPOSITE MODULE 公开/授权日:2021-08-19
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