Invention Grant
- Patent Title: Sputtering apparatus and method of fabricating magnetic memory device using the same
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Application No.: US17956281Application Date: 2022-09-29
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Publication No.: US11834738B2Publication Date: 2023-12-05
- Inventor: Joonmyoung Lee , Whankyun Kim , Eunsun Noh , Jeong-heon Park , Junho Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190113431 2019.09.16
- Main IPC: C23C14/54
- IPC: C23C14/54 ; C23C14/00 ; G11B5/851 ; H10B61/00 ; H10N50/01

Abstract:
A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.
Public/Granted literature
- US20230013146A1 SPUTTERING APPARATUS AND METHOD OF FABRICATING MAGNETIC MEMORY DEVICE USING THE SAME Public/Granted day:2023-01-19
Information query
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