- 专利标题: Memory device, memory system, and operating method of memory system
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申请号: US17409064申请日: 2021-08-23
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公开(公告)号: US11837317B2公开(公告)日: 2023-12-05
- 发明人: Sun Young Lim , Seung Yong Shin , Hyun Duk Cho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Muir Patent Law, PLLC
- 优先权: KR 20200166312 2020.12.02
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C7/22
摘要:
A memory device including a plurality of nonvolatile memory chips each including a status output pin and a buffer chip configured to receive a plurality of internal state signals, which indicate states of the plurality of nonvolatile memory chips, from the status output pins and output an external state signal having a set period on the basis of the internal state signals indicating a particular state, wherein in a first section of the external state signal having the set period, a duty cycle of the external state signal determines depending on an identification (ID) of the nonvolatile memory chip which outputs the internal state signal indicating the particular state among the plurality of nonvolatile memory chips.
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