- Patent Title: Depositing a carbon hardmask by high power pulsed low frequency RF
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Application No.: US17595505Application Date: 2020-05-28
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Publication No.: US11837441B2Publication Date: 2023-12-05
- Inventor: Matthew Scott Weimer , Pramod Subramonium , Ragesh Puthenkovilakam , Rujun Bai , David French
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- International Application: PCT/US2020/034971 2020.05.28
- International Announcement: WO2020/243342A 2020.12.03
- Date entered country: 2021-11-18
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C16/517 ; C23C16/52 ; H01L21/027 ; H01L21/311 ; H01L21/3213
Abstract:
Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.
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