发明授权
- 专利标题： Electrical fuse bit cell in integrated circuit having backside conducting lines
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申请号： US17412999申请日： 2021-08-26
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公开(公告)号： US11837539B2公开(公告)日： 2023-12-05
- 发明人: Chien-Ying Chen , Yen-Jen Chen , Yao-Jen Yang , Meng-Sheng Chang , Chia-En Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Hautpman Ham, LLP
- 主分类号： G11C29/02
- IPC分类号： G11C29/02 ; H01L23/525 ; G11C17/16 ; H01L23/48 ; H10B20/20
摘要：
An integrated circuit includes a front-side horizontal conducting line in a first metal layer, a front-side vertical conducting line in a second metal layer, a front-side fuse element, and a backside conducting line. The front-side horizontal conducting line is directly connected to the drain terminal-conductor of a transistor through a front-side terminal via-connector. The front-side vertical conducting line is directly connected to the front-side horizontal conducting line through a front-side metal-to-metal via-connector. The front-side fuse element having a first fuse terminal conductively connected to the front-side vertical conducting line. The backside conducting line is directly connected to the source terminal-conductor of the transistor through a backside terminal via-connector.
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