Invention Grant
- Patent Title: Semiconductor device without a break region
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Application No.: US17666872Application Date: 2022-02-08
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Publication No.: US11842999B2Publication Date: 2023-12-12
- Inventor: Dae Seong Lee , Min Su Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20160049271 2016.04.22
- The original application number of the division: US16733634 2020.01.03
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L23/528 ; H01L27/02 ; H01L29/78 ; H03K3/356 ; H03K3/3562 ; H03K19/0948 ; H03K19/20 ; H01L21/8238

Abstract:
A semiconductor device includes a first active region, a second active region, a first gate line disposed to overlap the first and second active regions, a second gate line disposed to overlap the first and second active regions, a first metal line electrically connecting the first and second gate lines and providing a first signal to both the first and second gate lines, a first contact structure electrically connected to part of the first active region between the first and second gate lines, a second contact structure electrically connected to part of the second active region between the first and second gate lines, and a second metal line electrically connected to the first and second contact structures and transmitting a second signal, wherein an overlapped region that is overlapped by the second metal line does not include a break region.
Public/Granted literature
- US20220165734A1 SEMICONDUCTOR DEVICE WITHOUT A BREAK REGION Public/Granted day:2022-05-26
Information query
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