- 专利标题: Self-reference sensing for memory cells
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申请号: US17986522申请日: 2022-11-14
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公开(公告)号: US11848038B2公开(公告)日: 2023-12-19
- 发明人: Riccardo Muzzetto
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Holland & Hart LLP
- 分案原申请号: US17097749 2020.11.13
- 主分类号: G11C11/22
- IPC分类号: G11C11/22 ; G06F13/40 ; G11C13/00
摘要:
Methods, systems, and apparatuses for self-referencing sensing schemes are described. A cell having two transistors, or other switching components, and one capacitor, such as a ferroelectric capacitor, may be sensed using a reference value that is specific to the cell. The cell may be read and sampled via one access line, and the cell may be used to generate a reference voltage and sampled via another access line. For instance, a first access line of a cell may be connected to one read voltage while a second access line of the cell is isolated from a voltage source; then the second access line may be connected to another read voltage while the first access line is isolate from a voltage source. The resulting voltages on the respective access lines may be compared to each other and a logic value of the cell determined from the comparison.
公开/授权文献
- US20230071819A1 SELF-REFERENCE SENSING FOR MEMORY CELLS 公开/授权日:2023-03-09
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