Invention Grant
- Patent Title: Semiconductor component and manufacturing method thereof
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Application No.: US17329393Application Date: 2021-05-25
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Publication No.: US11848380B2Publication Date: 2023-12-19
- Inventor: Koichi Amari
- Applicant: Sony Group Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Group Corporation
- Current Assignee: Sony Group Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP 09298319 2009.12.28
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/10
Abstract:
A semiconductor component including: a semiconductor substrate; and a semiconductor device provided thereon, the device being a field-effect transistor that includes: a gate insulating film provided on the substrate; a gate electrode provided via the film; and a pair of source-drain regions provided to sandwich the electrode, the substrate including a patterned surface in a portion where the electrode is provided, the patterned surface of the substrate including a raised portion where the film is formed to cover a surface that lies on the same plane as a surface of the pair of source-drain regions, and the electrode is formed on a top surface of the film, and the patterned surface of the substrate including a recessed portion where the film is formed to cover surfaces of a groove formed toward the interior than the surface of the pair of source-drain regions, and the electrode is formed so as to fill the groove provided with the film.
Public/Granted literature
- US20210296496A1 SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-23
Information query
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