- 专利标题: Electro-static discharge device with integrated capacitance
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申请号: US17454929申请日: 2021-11-15
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公开(公告)号: US11848553B2公开(公告)日: 2023-12-19
- 发明人: Evgueniy Nikolov Stefanov , Pascal Kamel Abouda
- 申请人: NXP USA, Inc.
- 申请人地址: US TX Austin
- 专利权人: NXP USA, Inc.
- 当前专利权人: NXP USA, Inc.
- 当前专利权人地址: US TX Austin
- 优先权: EP 306393 2020.11.17
- 主分类号: H02H9/04
- IPC分类号: H02H9/04 ; H01L27/02
摘要:
An integrated electro-static discharge (ESD) device has a set of metal layers. Each metal layer in the set has one or more first-terminal metal features interleaved with one or more second-terminal metal features in a lateral direction, and at least one first-terminal metal feature in a metal layer of the set overlaps in a normal direction at least one second-terminal metal feature in an adjacent metal layer of the set. By overlapping metal features in the normal direction, capacitance can be added to the ESD device, which improves its operating characteristics, without increasing the layout size of the ESD device.
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