Invention Grant
- Patent Title: Arrangement of source or drain conductors of transistor
-
Application No.: US17525173Application Date: 2021-11-12
-
Publication No.: US11853670B2Publication Date: 2023-12-26
- Inventor: Chih-Yu Lai , Chih-Liang Chen , Chi-Yu Lu , Shang-Hsuan Chiu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/39
- IPC: G06F30/39 ; H01L29/40 ; G06F30/392 ; G06F30/398 ; G06F30/394

Abstract:
An integrated circuit includes a first conductor segment intersecting a first active-region structure at a source/drain region and a second conductor segment intersecting a second active-region structure at a source/drain region. The first conductor segment and the second conductor segment are separated at proximal edges by a separation distance. The first conductor has a distal edge separated from a first power rail, and the second conductor segment is connected to a second power rail through a via-connector. A distance from the first power rail to a proximal edge of the first conductor segment is larger than a distance from the second power rail to a proximal edge of the second conductor segment by a predetermined distance that is a fraction of the separation distance.
Public/Granted literature
- US20230154990A1 ARRANGEMENT OF SOURCE OR DRAIN CONDUCTORS OF TRANSISTOR Public/Granted day:2023-05-18
Information query