The present application discloses a GOA circuit and a display panel. High-temperature durability of a first node is improved not only by adding a thirteenth transistor to a pull-down remaining module to lower a voltage difference between a source and a drain of the an eleventh transistor to suppress electric leakage of the first node, but also by adding a twentieth transistor to the pull-down remaining module to lower a voltage difference between a gate and a source of a nineteenth transistor to suppress electric leakage of the first node.