Invention Grant
- Patent Title: Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methods
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Application No.: US17520276Application Date: 2021-11-05
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Publication No.: US11854623B2Publication Date: 2023-12-26
- Inventor: Jaeduk Yu , Dongkyo Shim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190044478 2019.04.16
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G06F12/02 ; G06F3/06 ; G11C16/34

Abstract:
Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.
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