Methods of processing a feature on a semiconductor workpiece are disclosed. The method is performed after features have been created on the workpiece. An etching species may be directed toward the workpiece at a non-zero tilt angle. In certain embodiments, the tilt angle may be 30° or more. Further, the etching species may also be directed with a non-zero twist angle. In certain embodiments, the etching species may sputter material from the features, while in other embodiments, the etching species may be a chemically reactive species. By adjusting the tilt and twist angles, as well as the flow rate of the etching species and the exposure time, the LER and LWR of a feature may be reduced with minimal impact of the CD of the feature.