Invention Grant
- Patent Title: Semiconductor device and display device including the same
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Application No.: US17377674Application Date: 2021-07-16
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Publication No.: US11862454B2Publication Date: 2024-01-02
- Inventor: Shunpei Yamazaki , Junichi Koezuka , Kenichi Okazaki , Masami Jintyou
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 14218938 2014.10.28
- The original application number of the division: US14921141 2015.10.23
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L29/417 ; H01L29/423 ; H01L21/02 ; H01L21/425 ; H01L29/49 ; H01L27/12 ; H01L21/473 ; H01L21/768
Abstract:
A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.
Public/Granted literature
- US20210343870A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SAME Public/Granted day:2021-11-04
Information query
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