Invention Grant
- Patent Title: Method for manufacturing semiconductor device having gallium oxide-based semiconductor layer
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Application No.: US17551274Application Date: 2021-12-15
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Publication No.: US11862477B2Publication Date: 2024-01-02
- Inventor: Shuhei Ichikawa , Hiroki Miyake
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee Address: JP Kariya; JP Toyota; JP Nisshin
- Agency: POSZ LAW GROUP, PLC
- Priority: JP 21004786 2021.01.15
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/425 ; H01L29/24
Abstract:
A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.
Public/Granted literature
- US20220230890A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING GALLIUM OXIDE-BASED SEMICONDUCTOR LAYER Public/Granted day:2022-07-21
Information query
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