Invention Grant
- Patent Title: Drive circuitry for power switching transistor of the switching power supply
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Application No.: US17966882Application Date: 2022-10-16
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Publication No.: US11863167B1Publication Date: 2024-01-02
- Inventor: Jianye Qiu
- Applicant: Nanjing Greenchip Semiconductor Co., Ltd.
- Applicant Address: CN Nanjing
- Assignee: Nanjing Greenchip Semiconductor Co., Ltd.
- Current Assignee: Nanjing Greenchip Semiconductor Co., Ltd.
- Current Assignee Address: CN Nanjing
- Agency: Huntington IP Consulting Co., Ltd.
- Agent Chih Feng Yeh
- Priority: CN 2210957014.7 2022.08.10
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
A drive circuit for a power switching transistor includes a first pull-up drive transistor connected in parallel with a second pull-up drive transistor, a first pull-down drive transistor coupled to the first and second pull-up drive transistors in series to drive the power switching transistor. When control signal is at a high level, the first pull-up driver is turned on, and the first pull-down driver is turned off. The second pull-up drive transistor being in turn-on or turn-off state is determined by comparing voltage of the power supply with the threshold value. When voltage of the power supply is lower than the threshold value, the first and second pull-up drive transistor are driven together. When voltage of the power supply is higher than the threshold value, the second pull-up driving transistor is turned on only after the driving output is slightly larger than the Miller plateau voltage.
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