Invention Grant
- Patent Title: Magnetoresistive random access memory
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Application No.: US17348776Application Date: 2021-06-16
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Publication No.: US11864468B2Publication Date: 2024-01-02
- Inventor: Hui-Lin Wang , Si-Han Tsai , Dong-Ming Wu , Chen-Yi Weng , Ching-Hua Hsu , Ju-Chun Fan , Yi-Yu Lin , Che-Wei Chang , Po-Kai Hsu , Jing-Yin Jhang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110533886.6 2021.05.17
- Main IPC: G11C16/04
- IPC: G11C16/04 ; H10N50/10 ; H01F10/32 ; G11C11/16 ; H10B61/00 ; H10N50/80 ; H10N50/85
Abstract:
A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.
Public/Granted literature
- US20220367791A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2022-11-17
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