- 专利标题： Die stack and integrated device structure including improved bonding structure and methods of forming the same
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申请号： US17460180申请日： 2021-08-28
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公开(公告)号： US11869859B2公开(公告)日： 2024-01-09
- 发明人: Jen-Yuan Chang
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： The Marbury Law Group, PLLC
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/58
摘要：
A die stack includes: a first die including a first semiconductor substrate; a second die including a second semiconductor substrate; a bonding dielectric structure including a bonding polymer and that bonds the first die and the second die; a bonding interconnect structure that extends through the bonding dielectric structure to bond and electrically connect the first die and the second die; and a bonding dummy pattern that extends through the bonding dielectric structure to bond the first die and the second die. The bonding dummy pattern is electrically conductive and is electrically floated.
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