Invention Grant
- Patent Title: Method for fabricating semiconductor device
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Application No.: US17180876Application Date: 2021-02-22
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Publication No.: US11871677B2Publication Date: 2024-01-09
- Inventor: Tai-Cheng Hou , Fu-Yu Tsai , Bin-Siang Tsai , Da-Jun Lin , Chau-Chung Hou , Wei-Xin Gao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2110095432.5 2021.01.25
- Main IPC: H10N50/01
- IPC: H10N50/01 ; H10B61/00 ; H10N50/80
Abstract:
A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.
Public/Granted literature
- US20220238800A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2022-07-28
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