- 专利标题: 3-D power modules with double sided cooling per semiconductor die
-
申请号: US17215883申请日: 2021-03-29
-
公开(公告)号: US11876034B2公开(公告)日: 2024-01-16
- 发明人: Muhammad H. Alvi , Ming Liu , Rashmi Prasad , Anthony M. Coppola
- 申请人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 申请人地址: US MI Detroit
- 专利权人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 当前专利权人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 当前专利权人地址: US MI Detroit
- 主分类号: H01L23/473
- IPC分类号: H01L23/473 ; H01L25/065 ; H05K7/20
摘要:
A power module is provided and includes first stack, second stack, and third stacks of layers, a heat pipe, and at least one cold plate or heat sink. The third stack of layers is disposed between the first and second stacks of layers and includes a first semiconductor die, a second semiconductor die and a center spacer layer disposed between the first semiconductor die and the second semiconductor die. The heat pipe extends at least partially into the center spacer layer. The at least one cold plate or heat sink receives thermal energy from the first stack of layers and the second stack of layers. The first stack of layers, the second stack of layers, the third stack of layers, the heat pipe and the at least one cold plate or heat sink facilitate dual sided cooling of each of the first semiconductor die and the second semiconductor die.
公开/授权文献
信息查询
IPC分类: