- 专利标题: Monolithic integrated half-bridge circuit
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申请号: US17683398申请日: 2022-03-01
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公开(公告)号: US11876437B2公开(公告)日: 2024-01-16
- 发明人: Kennith Kin Leong
- 申请人: Infineon Technologies Austria AG
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: COOPER LEGAL GROUP, LLC
- 主分类号: H02M1/088
- IPC分类号: H02M1/088 ; H03K17/687 ; H01L27/06 ; H01L29/20 ; H01L29/778
摘要:
According to some embodiments, a half-bridge circuit is provided. The half-bridge circuit includes a substrate, a monolithic die over the substrate, a switch node, a high-side switch integrated with the monolithic die and coupled to the switch node, and a conductive structure including a first terminal coupled to the substrate and a second terminal coupled to the switch node.
公开/授权文献
- US20230283166A1 MONOLITHIC INTEGRATED HALF-BRIDGE CIRCUIT 公开/授权日:2023-09-07
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