Invention Grant
- Patent Title: High performance high voltage isolators
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Application No.: US16916748Application Date: 2020-06-30
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Publication No.: US11881449B2Publication Date: 2024-01-23
- Inventor: Jeffrey Alan West , Thomas Dyer Bonifield
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/58 ; H01L23/64 ; H01L27/01

Abstract:
An integrated circuit includes a semiconductor substrate and a plurality of dielectric layers over the semiconductor substrate, including a top dielectric layer. A metal plate or metal coil is located over the top dielectric layer; a metal ring is located over the top dielectric layer and substantially surrounds the metal plate or metal coil. A protective overcoat overlies the metal ring and overlies the metal plate or metal coil. A trench opening is formed through the protective overcoat, with the trench opening exposing the top dielectric layer between the metal plate/coil and the metal ring, the trench opening substantially surrounding the metal plate or metal coil.
Public/Granted literature
- US20210020564A1 HIGH PERFORMANCE HIGH VOLTAGE ISOLATORS Public/Granted day:2021-01-21
Information query
IPC分类: