Invention Grant
- Patent Title: Integrated thick film spacer for RF devices
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Application No.: US17154255Application Date: 2021-01-21
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Publication No.: US11881610B2Publication Date: 2024-01-23
- Inventor: Keely M. Musgrove , Mark B. Hanna
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: CANTOR COLBURN LLP
- Main IPC: H01P1/387
- IPC: H01P1/387 ; H01P1/38 ; H01P1/36 ; H01P11/00 ; B41M1/12 ; B32B7/12 ; B32B37/12 ; B32B38/00 ; B32B15/04

Abstract:
A method of fabricating a portion of magnetically controlled signal distribution device includes receiving a substrate and screen printing a low-k dielectric spacer over an upper surface of the surface from a low-k dielectric paste. The method also includes firing the substrate after the spacer has been screen printed thereon, forming an adhesive layer on top of the spacer and securing a magnet to a top of the adhesive layer.
Public/Granted literature
- US20220231393A1 INTEGRATED THICK FILM SPACER FOR RF DEVICES Public/Granted day:2022-07-21
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