- 专利标题: Method of forming a film on a substrate by chemical vapor deposition
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申请号: US17670832申请日: 2022-02-14
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公开(公告)号: US11885022B2公开(公告)日: 2024-01-30
- 发明人: Chikara Mori , Waichi Yamamura
- 申请人: SHIN-ETSU CHEMICAL CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP 18098575 2018.05.23
- 分案原申请号: US16418142 2019.05.21
- 主分类号: C23C16/458
- IPC分类号: C23C16/458 ; C23C16/26 ; C23C16/32 ; C23C16/30
摘要:
A film may be formed on a surface of a substrate by chemical vapor deposition in a reaction container provided with at least a first holding member that is capable of holding the substrate and a second holding member that is capable of holding the substrate independently from the first holding member, by:
(a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member;
(b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and
(c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.
(a) forming a film on the surface of the substrate by chemical vapor deposition while holding the substrate by the first holding member;
(b) moving at least one holding member among the first holding member and the second holding member in at least one direction of the upward direction and the downward direction to hold the substrate by the second holding member instead of the first holding member; and
(c) forming a film on the surface of the substrate held by the second holding member by chemical vapor deposition.
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