Invention Grant
- Patent Title: Simulation system for semiconductor process and simulation method thereof
-
Application No.: US18153573Application Date: 2023-01-12
-
Publication No.: US11886783B2Publication Date: 2024-01-30
- Inventor: Sanghoon Myung , Hyunjae Jang , In Huh , Hyeon Kyun Noh , Min-Chul Park , Changwook Jeong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20190151830 2019.11.25
- Main IPC: G06F30/27
- IPC: G06F30/27 ; G06N3/08 ; G06N3/10 ; G06F30/398 ; G06N3/044

Abstract:
Provided is a simulation method performed by a process simulator, implemented with a recurrent neural network (RNN) including a plurality of process emulation cells, which are arranged in time series and configured to train and predict, based on a final target profile, a profile of each process step included in a semiconductor manufacturing process. The simulation method includes: receiving, at a first process emulation cell, a previous output profile provided at a previous process step, a target profile and process condition information of a current process step; and generating, at the first process emulation cell, a current output profile corresponding to the current process step, based on the target profile, the process condition information, and prior knowledge information, the prior knowledge information defining a time series causal relationship between the previous process step and the current process step.
Public/Granted literature
- US20230142367A1 SIMULATION SYSTEM FOR SEMICONDUCTOR PROCESS AND SIMULATION METHOD THEREOF Public/Granted day:2023-05-11
Information query