Invention Grant
- Patent Title: Method of forming transition metal dichalcogenidethin film and method of manufacturing electronic device including the same
-
Application No.: US17012661Application Date: 2020-09-04
-
Publication No.: US11887849B2Publication Date: 2024-01-30
- Inventor: Changhyun Kim , Sangwoo Kim , Kyung-Eun Byun , Hyeonjin Shin , Ahrum Sohn , Jaehwan Jung
- Applicant: Samsung Electronics Co., Ltd. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation, Sungkyunkwan University
- Current Assignee: Samsung Electronics Co., Ltd.,Research & Business Foundation, Sungkyunkwan University
- Current Assignee Address: KR Gyeonggi-do; KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190112370 2019.09.10
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C14/34 ; C23C14/58 ; C23C14/06 ; H01L29/66
Abstract:
Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: depositing a transition metal dichalcogenide thin film on a substrate; and heat-treating the deposited transition metal dichalcogenide thin film.
Public/Granted literature
Information query
IPC分类:
