Invention Grant
- Patent Title: Semiconductor device encapsulated by molding material attached to redistribution layer
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Application No.: US17875312Application Date: 2022-07-27
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Publication No.: US11887952B2Publication Date: 2024-01-30
- Inventor: Shin-Puu Jeng , Shuo-Mao Chen , Feng-Cheng Hsu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/683
- IPC: H01L21/683 ; H01L23/31 ; H01L23/48 ; H01L25/065 ; H01L23/498 ; H01L23/538 ; H01L23/00 ; H01L25/00 ; H01L25/10 ; H01L21/56

Abstract:
A package structure includes a first dielectric layer, a first semiconductor device over the first dielectric layer, a first redistribution line in the first dielectric layer, a second dielectric layer over the first semiconductor device, a second semiconductor device over the second dielectric layer, a second redistribution line in the second dielectric layer, a conductive through-via over the first dielectric layer and electrically connected to the first redistribution line, a conductive ball over the conductive through-via and electrically connected to the second redistribution line, and a molding material. The molding material surrounds the first semiconductor device, the conductive through-via, and the conductive ball, wherein a top of the conductive ball is higher than a top of the molding material.
Public/Granted literature
- US20220367395A1 SEMICONDUCTOR DEVICE ENCAPSULATED BY MOLDING MATERIAL ATTACHED TO REDISTRIBUTION LAYER Public/Granted day:2022-11-17
Information query
IPC分类: