Invention Grant
- Patent Title: Land-side silicon capacitor design and semiconductor package using the same
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Application No.: US17494851Application Date: 2021-10-06
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Publication No.: US11887976B2Publication Date: 2024-01-30
- Inventor: Che-Hung Kuo , Yi-Jyun Lee
- Applicant: MEDIATEK INC.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L27/01 ; H01L25/065 ; H01L23/58 ; H01L49/02

Abstract:
A semiconductor package includes a package substrate; a semiconductor die mounted on a top surface of the package substrate; a plurality of conductive elements disposed on a bottom surface of the package substrate; and a land-side silicon capacitor disposed on the bottom surface of the package substrate and surrounded by the plurality of conductive elements. The land-side silicon capacitor includes at least two silicon capacitor unit dies adjoined to each other with an integral scribe line region.
Public/Granted literature
- US20220130814A1 LAND-SIDE SILICON CAPACITOR DESIGN AND SEMICONDUCTOR PACKAGE USING THE SAME Public/Granted day:2022-04-28
Information query
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