- 专利标题： Ultra narrow trench patterning with dry plasma etching
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申请号： US17826528申请日： 2022-05-27
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公开(公告)号： US11894237B2公开(公告)日： 2024-02-06
- 发明人: Chao-Hsuan Chen , Yuan-Sheng Huang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/8234 ; H01L21/3213
摘要：
A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer.
公开/授权文献
- US20220285165A1 Ultra Narrow Trench Patterning with Dry Plasma Etching 公开/授权日：2022-09-08
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