Invention Grant
- Patent Title: Light-emitting device comprising charge-generation layer between light-emitting units
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Application No.: US17435452Application Date: 2020-02-24
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Publication No.: US11903232B2Publication Date: 2024-02-13
- Inventor: Takeyoshi Watabe , Airi Ueda , Nobuharu Ohsawa , Satoshi Seo
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Husch Blackwell LLP
- Priority: JP 190414455 2019.03.07
- International Application: PCT/IB2020/051515 2020.02.24
- International Announcement: WO2020/178660A 2020.09.10
- Date entered country: 2021-09-01
- Main IPC: H10K50/19
- IPC: H10K50/19 ; H10K50/852 ; H10K85/30 ; G06V40/13 ; H10K50/818 ; H10K50/828 ; H10K71/00 ; H10K102/00

Abstract:
A light-emitting device is provided. The light-emitting device includes an intermediate layer, a first light-emitting unit, and a second light-emitting unit. The intermediate layer includes a region interposed between the first light-emitting unit and the second light-emitting unit. The intermediate layer has a function of supplying an electron to one of the first light-emitting unit and the second light-emitting unit and supplying a hole to the other. The first light-emitting unit includes a first light-emitting layer, the first light-emitting layer includes a first light-emitting material, the second light-emitting unit includes a second light-emitting layer, the second light-emitting layer includes a second light-emitting material, the second light-emitting layer has a first distance from the first light-emitting layer, and the first distance is longer than or equal to 5 nm and shorter than or equal to 65 nm.
Public/Granted literature
- US20220069258A1 Light-Emitting Device Public/Granted day:2022-03-03
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