- 专利标题: Protection liner on interconnect wire to enlarge processing window for overlying interconnect via
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申请号: US17718461申请日: 2022-04-12
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公开(公告)号: US11908794B2公开(公告)日: 2024-02-20
- 发明人: Shin-Yi Yang , Hsin-Yen Huang , Ming-Han Lee , Shau-Lin Shue , Yu-Chen Chan , Meng-Pei Lu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Eschweiler & Potashnik, LLC
- 主分类号: H01L23/522
- IPC分类号: H01L23/522 ; H01L23/532 ; H01L21/768
摘要:
In some embodiments, the present disclosure relates to an integrated chip that includes a lower dielectric arranged over a substrate. An interconnect wire is arranged over the dielectric layer, and a first interconnect dielectric layer is arranged outer sidewalls of the interconnect wire. A protection liner that includes graphene is arranged directly on the outer sidewalls of the interconnect wire and on a top surface of the interconnect wire. The integrated chip further includes a first etch stop layer arranged directly on upper surfaces of the first interconnect dielectric layer, and a second interconnect dielectric layer arranged over the first interconnect dielectric layer and the interconnect wire. Further, an interconnect via extends through the second interconnect dielectric layer, is arranged directly over the protection liner, and is electrically coupled to the interconnect wire.
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