Invention Grant
- Patent Title: Capacitor and semiconductor device including the same
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Application No.: US17307592Application Date: 2021-05-04
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Publication No.: US11908887B2Publication Date: 2024-02-20
- Inventor: Jaeho Lee , Boeun Park , Younggeun Park , Jooho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20200142528 2020.10.29
- Main IPC: H10B53/00
- IPC: H10B53/00 ; H01L49/02

Abstract:
Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.
Public/Granted literature
- US20220140066A1 CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2022-05-05
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