Invention Grant
- Patent Title: Semiconductor device having embedded conductive line and method of fabricating thereof
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Application No.: US16949363Application Date: 2020-10-27
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Publication No.: US11908910B2Publication Date: 2024-02-20
- Inventor: Chih-Chuan Yang , Jing-Yi Lin , Hsin-Wen Su , Shih-Hao Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/786 ; H01L27/092 ; H01L29/423 ; H10B10/00 ; H01L27/088 ; H01L21/8234
Abstract:
Methods and devices that provide a first fin structure, a second fin structure, and a third fin structure disposed over a substrate. A dielectric fin is formed between the first fin structure and the second fin structure, and a conductive line is formed between the second fin structure and the third fin structure.
Public/Granted literature
- US20220130971A1 SEMICONDUCTOR DEVICE HAVING EMBEDDED CONDUCTIVE LINE AND METHOD OF FABRICATING THEREOF Public/Granted day:2022-04-28
Information query
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