- Patent Title: Storage device adjusting history read level storage areas based on reliabilities of memory blocks, storage controller, and operating method of storage controller
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Application No.: US17742030Application Date: 2022-05-11
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Publication No.: US11914892B2Publication Date: 2024-02-27
- Inventor: Kwangwoo Lee , Sangjin Yoo , Yeonji Kim , Jeongkeun Park , Jeongwoo Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR 20210115702 2021.08.31
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A storage device includes a non-volatile memory including memory blocks, and a storage controller including a history buffer including plural history read level storage areas corresponding to the memory blocks. The storage controller dynamically adjusts a number of the history read level storage areas allocated to one or more of the plurality of memory blocks based on reliabilities of the memory blocks during runtime of the storage device. The storage controller increases a number of history read level storage areas allocated to a first memory block among the memory blocks that has a relatively low reliability with respect to the reliabilities of remaining ones of the memory blocks.
Public/Granted literature
- US20230066982A1 STORAGE DEVICE, STORAGE CONTROLLER, AND OPERATING METHOD OF STORAGE CONTROLLER Public/Granted day:2023-03-02
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