Invention Grant
- Patent Title: BSI image sensor and method of forming same
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Application No.: US17231223Application Date: 2021-04-15
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Publication No.: US11916091B2Publication Date: 2024-02-27
- Inventor: Hung-Wen Hsu , Jiech-Fun Lu , Yeur-Luen Tu , U-Ting Chen , Shu-Ting Tsai , Hsiu-Yu Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US15905033 2018.02.26
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146
Abstract:
A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.
Public/Granted literature
- US20210233945A1 BSI Image Sensor and Method of Forming Same Public/Granted day:2021-07-29
Information query
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