- 专利标题： Method of evaluating cleanliness, method of determining cleaning condition, and method of manufacturing silicon wafer
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申请号： US17392652申请日： 2021-08-03
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公开(公告)号： US11920257B2公开(公告)日： 2024-03-05
- 发明人: Takashi Muramatsu , Hirokazu Kato
- 申请人： SUMCO CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： SUMCO CORPORATION
- 当前专利权人： SUMCO CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Greenblum & Bernstein, P.L.C.
- 优先权： JP 16064071 2016.03.28
- 分案原申请号： US16087879
- 主分类号： C04B35/565
- IPC分类号： C04B35/565 ; C23C16/44 ; C30B29/06 ; G01N27/62 ; H01J37/32 ; H01L21/02 ; H01L21/304 ; C30B23/02 ; C30B29/36 ; G01N27/623 ; G01N33/00
摘要：
A method of evaluating cleanliness of a member having a silicon carbide surface, the method including bringing the silicon carbide surface into contact with a mixed acid of hydrofluoric acid, hydrochloric acid and nitric acid; concentrating the mixed acid brought into contact with the silicon carbide surface by heating; subjecting a sample solution obtained by diluting a concentrated liquid obtained by the concentration to quantitative analysis of metal components by Inductively Coupled Plasma-Mass Spectrometry; and evaluating cleanliness of the member having a silicon carbide surface on the basis of a quantitative result of metal components obtained by the quantitative analysis.
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