Invention Grant
- Patent Title: Memory controller and storage device
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Application No.: US17831284Application Date: 2022-06-02
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Publication No.: US11929140B2Publication Date: 2024-03-12
- Inventor: Young Min Lee , Hyung Jin Kim , Seong Wan Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20210126246 2021.09.24
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F13/28

Abstract:
A memory controller comprising a DMA master device configured to provide a first data group to a non-volatile memory (NVM) device, a program buffer memory configured to temporarily store the first data group before the DMA master device provides the first data group to the NVM device, an exclusive OR computing circuit configured to perform an exclusive OR computation and an accumulation on a plurality of data included in the first data group provided from the program buffer memory to generate a first recovery data, after the DMA master device provides the first data group to the NVM device, and a buffer slave device including a first program recovery buffer memory configured to store the first recovery data and provide the first recovery data from the first program recovery buffer memory to the program buffer memory, in response to a program failure signal, may be provided.
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