- 专利标题: Memory controller and storage device
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申请号: US17831284申请日: 2022-06-02
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公开(公告)号: US11929140B2公开(公告)日: 2024-03-12
- 发明人: Young Min Lee , Hyung Jin Kim , Seong Wan Hong
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR 20210126246 2021.09.24
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G06F13/28
摘要:
A memory controller comprising a DMA master device configured to provide a first data group to a non-volatile memory (NVM) device, a program buffer memory configured to temporarily store the first data group before the DMA master device provides the first data group to the NVM device, an exclusive OR computing circuit configured to perform an exclusive OR computation and an accumulation on a plurality of data included in the first data group provided from the program buffer memory to generate a first recovery data, after the DMA master device provides the first data group to the NVM device, and a buffer slave device including a first program recovery buffer memory configured to store the first recovery data and provide the first recovery data from the first program recovery buffer memory to the program buffer memory, in response to a program failure signal, may be provided.
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