Invention Grant
- Patent Title: Contact window structure and method for forming contact window structure
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Application No.: US17396910Application Date: 2021-08-09
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Publication No.: US11929280B2Publication Date: 2024-03-12
- Inventor: Ping-Heng Wu
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Cooper Legal Group, LLC
- Priority: CN 2011000651.2 2020.09.22
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48

Abstract:
A contact window structure and a method for forming the contact window structure are provided. The method includes: an etching spacer is formed on a surface of a target layer, and a dielectric layer covering a substrate, the target layer and the etching spacer is formed; the dielectric layer is etched to form an etching hole in the dielectric layer, a bottom of the etching hole exposing a top surface of the etching spacer; and the etching spacer is removed along the etching hole to form an etching channel communicating with the etching hole, the etching channel exposing a portion of the surface of the target layer and constituting a contact window structure with the etching hole.
Public/Granted literature
- US20220093454A1 CONTACT WINDOW STRUCTURE AND METHOD FOR FORMING CONTACT WINDOW STRUCTURE Public/Granted day:2022-03-24
Information query
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