Invention Grant
- Patent Title: Electrostatic discharge protection circuit having a metal connection and method for manufacturing the electrostatic discharge protection circuit
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Application No.: US17532446Application Date: 2021-11-22
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Publication No.: US11929305B2Publication Date: 2024-03-12
- Inventor: Andre Schmenn , Klaus Diefenbeck , Joost Adriaan Willemen
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP 209267 2020.11.23
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/822 ; H01L23/482 ; H01L27/02 ; H01L21/56
Abstract:
In a method for manufacturing an electrostatic discharge protection circuit, an electrostatic discharge device structure is formed during a front side processing of a semiconductor substrate in a first area. Contact pads are formed on the front side on the electrostatic discharge device structure and in a second area. During back side processing of the semiconductor substrate, a metal connection between the first electrostatic discharge device structure and the second area is formed.
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