Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US17189718Application Date: 2021-03-02
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Publication No.: US11929332B2Publication Date: 2024-03-12
- Inventor: Soichi Homma , Tatsuo Migita , Masayuki Miura , Takeori Maeda , Kazuhiro Kato , Susumu Yamamoto
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 20117274 2020.07.07
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L25/18

Abstract:
A semiconductor device includes a semiconductor chip having a first face and a second face on an opposite side to the first face, and including semiconductor elements arranged on the first face. Columnar electrodes are arranged above the first face, and electrically connected to any of the semiconductor elements. A first member is located around the columnar electrodes above the first face. An insulant covers the columnar electrodes and the first member. The first member is harder than the columnar electrodes and the insulant. The first member and the columnar electrodes are exposed from a surface of the insulant.
Public/Granted literature
- US20220013477A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-01-13
Information query
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