- 专利标题: Mixed exposure for large die
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申请号: US17579259申请日: 2022-01-19
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公开(公告)号: US11929347B2公开(公告)日: 2024-03-12
- 发明人: Javier A. Delacruz , Belgacem Haba
- 申请人: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- 申请人地址: US CA San Jose
- 专利权人: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- 当前专利权人: ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- 当前专利权人地址: US CA San Jose
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/68 ; H01L23/538 ; H01L25/065
摘要:
Techniques and arrangements for performing exposure operations on a wafer utilizing both a stepper apparatus and an aligner apparatus. The exposure operations are performed with respect to large composite base dies, e.g., interposers, defined within the wafer, where the interposers will become a part of microelectronic devices by coupling with active dies or microchips. The composite base dies may be coupled to the active dies via “native interconnects” utilizing direct bonding techniques. The stepper apparatus may be used to perform exposure operations on active regions of the composite base dies to provide a fine pitch for the native interconnects, while the aligner apparatus may be used to perform exposure operations on inactive regions of the composite base dies to provide a coarse pitch for interfaces with passive regions of the composite base dies.
公开/授权文献
- US20220216180A1 MIXED EXPOSURE FOR LARGE DIE 公开/授权日:2022-07-07
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