Invention Grant
- Patent Title: Shallow trench textured regions and associated methods
-
Application No.: US17369384Application Date: 2021-07-07
-
Publication No.: US11929382B2Publication Date: 2024-03-12
- Inventor: Homayoon Haddad , Jutao Jiang
- Applicant: SiOnyx, LLC
- Applicant Address: US MA Beverly
- Assignee: SIONYX, INC.
- Current Assignee: SIONYX, INC.
- Current Assignee Address: US MA Beverly
- Agency: Troutman Pepper Hamilton Sanders LLP (Rochester)
- Main IPC: H01L27/146
- IPC: H01L27/146 ; B23K26/352 ; B82Y40/00 ; H01L31/0232 ; H01L31/028 ; H01L31/18

Abstract:
Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.
Public/Granted literature
- US20210335878A1 SHALLOW TRENCH TEXTURED REGIONS AND ASSOCIATED METHODS Public/Granted day:2021-10-28
Information query
IPC分类: