Invention Grant
- Patent Title: Transistor antifuse, and related devices, systems, and methods
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Application No.: US17468523Application Date: 2021-09-07
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Publication No.: US11930636B2Publication Date: 2024-03-12
- Inventor: Christopher G. Wieduwilt , James S. Rehmeyer , Toshihiko Miyashita
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H10B20/20
- IPC: H10B20/20 ; G11C17/16 ; G11C17/18

Abstract:
Transistor antifuses are disclosed. An apparatus may include an antifuse that may be configurable either as a short between a first node and a second node or as an open between the first node and the second node. The antifuse may include a selection transistor and an antifuse transistor. A source or drain of the selection transistor may be electrically coupled to the first node. A gate of the selection transistor may be configured to receive a selection voltage. A gate of the antifuse transistor may be electrically coupled the other of the source or drain of the selection transistor. A source or drain of the antifuse transistor may be electrically coupled to the second node. Associated devices, systems, and methods are also disclosed.
Public/Granted literature
- US20230074975A1 TRANSISTOR ANITFUSE, AND RELATED DEVICES, SYSTEMS, AND METHODS Public/Granted day:2023-03-09
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