- 专利标题: High-speed level-shifter for power-conversion applications
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申请号: US18057316申请日: 2022-11-21
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公开(公告)号: US11942942B1公开(公告)日: 2024-03-26
- 发明人: Chit Sang Chan , Wei Qian , Ziyang Gao
- 申请人: Hong Kong Applied Science and Technology Research Institute Company Limited
- 申请人地址: HK Hong Kong
- 专利权人: Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人: Hong Kong Applied Science and Technology Research Institute Company Limited
- 当前专利权人地址: HK Hong Kong
- 代理机构: gPatent LLC
- 代理商 Stuart T. Auvinen
- 主分类号: H03K3/012
- IPC分类号: H03K3/012 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; H03K3/356
摘要:
A level shifter circuit uses standard n-channel and p-channel transistors except for a pair of Lateral-Diffusion Metal-Oxide-Semiconductor (LDMOS) transistors that have an added lateral diffusion under the gate between the source and the conduction channel, increasing the breakdown voltage. The source of each LDMOS transistor connects to a drain of a transient differential transistor that has its gate driven by a oneshot that generates a pulse after an input transition. After the pulse ends a holding differential transistor draws a smaller bias current from the LDMOS transistors. The source of each LDMOS transistor connects to the drain and gate of a p-channel sensing transistor that drives gates of mirror transistors generating mirrored currents to cross-coupled n-channel mirror transistors that drive both terminals of a bistable latch that holds the output using a floating ground between driver transistors of a Buck converter switched by the bistable latch.
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