Invention Grant
- Patent Title: Light-emitting device, light-emitting apparatus, electronic device, and lighting device
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Application No.: US17299386Application Date: 2019-11-27
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Publication No.: US11950447B2Publication Date: 2024-04-02
- Inventor: Takeyoshi Watabe , Airi Ueda , Nobuharu Ohsawa , Satoshi Seo
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Fish & Richardson P.C.
- Priority: JP 18230585 2018.12.10
- International Application: PCT/IB2019/060207 2019.11.27
- International Announcement: WO2020/121097A 2020.06.18
- Date entered country: 2021-06-03
- Main IPC: H01L51/50
- IPC: H01L51/50 ; C09K11/06 ; H10K50/818 ; H10K50/828 ; H10K50/852 ; H10K50/858 ; H10K85/30 ; H10K85/60 ; H10K102/00

Abstract:
A novel light-emitting device with a microcavity structure which can improve the emission efficiency compared to the conventional one is provided. In a light-emitting device with a microcavity structure that emits light in a near-infrared range, reflectance of one or both of a first electrode (reflective electrode) and a second electrode (semi-transmissive and semi-reflective electrode) with respect to light in a near-infrared range (e.g., light with a wavelength of 850 nm) is higher than the reflectance thereof with respect to light in a visible light range (greater than or equal to 400 nm and less than 750 nm).
Public/Granted literature
- US20220029134A1 LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICE Public/Granted day:2022-01-27
Information query
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