- 专利标题： Semiconductor storage device
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申请号： US17407576申请日： 2021-08-20
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公开(公告)号： US11955372B2公开(公告)日： 2024-04-09
- 发明人: Takehiro Nakai , Mizuki Tamura , Yumiko Yamashita
- 申请人： Kioxia Corporation
- 申请人地址： JP Tokyo
- 专利权人： KIOXIA CORPORATION
- 当前专利权人： KIOXIA CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Foley & Lardner LLP
- 优先权： JP 20185963 2020.11.06
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/02 ; H10B41/35 ; H10B43/35
摘要：
A semiconductor storage device includes: a semiconductor substrate; a plurality of circuit regions; and an element isolation region having a trench shape formed between the circuit regions. In the element isolation region including a thermal oxide film and a silicon oxide film, a sub-trench is formed in a bottom corner portion, and the thermal oxide film covers at least an inner wall of the sub-trench.
公开/授权文献
- US20220148910A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2022-05-12
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