- 专利标题： High density pillar interconnect conversion with stack to substrate connection
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申请号： US18169735申请日： 2023-02-15
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公开(公告)号： US11973062B2公开(公告)日： 2024-04-30
- 发明人: Owen R. Fay , Kyle K. Kirby , Akshay N. Singh
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Perkins Coie LLP
- 分案原申请号： US16671546 2019.11.01
- 主分类号： H01L25/065
- IPC分类号： H01L25/065 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L21/60
摘要：
A semiconductor device assembly can include a first semiconductor device and an interposer. The interposer can include a substrate and through vias in which individual vias include an exposed portion and an embedded portion, the exposed portions projecting from one or both of the first surface and the second surface of the substrate, and the embedded portions extending through at least a portion of the substrate. The interposer can include one or more test pads, a first electrical contact, and a second electrical contact. The semiconductor device assembly can include a controller positioned on an opposite side of the interposer from the first semiconductor device and operably coupled to the interposer via connection to the second electrical contact.
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